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Shallow Contact Formation of Gadolinium Silicide

  • I. C. Cheng (a1), S. S. Lau (a1), R. D. Thompson (a2) and K. N. Tu (a2)

Abstract

Gadolinium silicide with its attractive features of low formation temperature of about 350°C and low Schottky barrier height on n-type single-crystal silicon substrates (ϕn B1∼O.4ev,ϕp B ∼ 0.7ev) was chosen for studying the feasibility of forming shallow uniform contacts. Samples with various compositions prepared by both bilayer evaporation with a configuration of Si(α)/Gd/Si(xtl) and coevaporation with a Si−Gd /Si(xtl)structure were used for studying the contact formation as a function of composition and heat treatment. We found that shallow contact formation can be achieved provided that the following conditions are met: (a) for bilayer evaporation, the atomic ratio of Si(α)/Gd ≥ 2 should be maintained, (b) for coevaporation, the Si to Gd atomic ratio between 1.7 and 2.0 is desired. The bilayer deposition scheme appears to be a more convenient technique to use in practice.

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1. Kritzinger, S. and Tu, K.N., J. Appl. Phys. 52, 305 (1981).
2. Eizenberg, M., Foell, H. and Tu, K.N., J. Appl. Phys. 52, 861 (1981).
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Shallow Contact Formation of Gadolinium Silicide

  • I. C. Cheng (a1), S. S. Lau (a1), R. D. Thompson (a2) and K. N. Tu (a2)

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