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SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices

  • Karsten Fleck (a1) (a2), Ulrich Böttger (a1) (a2), Rainer Waser (a1) (a2) (a3) and Stephan Menzel (a2) (a3)


In this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.



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