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The Sensitivity of Renninger Scan Intensities with Al Content in Ga1-xA1xAs/GaAs Samples

  • J.M. Sasaki (a1), C. Campos (a1) and L. P. Cardoso (a1)

Abstract

The influence of the Al concentration in the X-Ray Renninger scans (RS) for the GaAlAs/GaAs system is investigated. The RS simulation program MULTX [Defect Control in Semiconductors, K. Sumino (ed.) Elsevier Sci. Pub. (North Holland), 1990, 1535] allows for the better choice of peak/background ratio which shows enough sensitivity to detect Al content changes. The three (000, 002, 111) and four beam (000, 002, 113, 111) peak/background ratios decrease with the increment of the Al content according to the structure factor calculation.

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The Sensitivity of Renninger Scan Intensities with Al Content in Ga1-xA1xAs/GaAs Samples

  • J.M. Sasaki (a1), C. Campos (a1) and L. P. Cardoso (a1)

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