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Semi-Insulating Behavior of Undoped Inp

Published online by Cambridge University Press:  22 February 2011

K. Kainosho ,
O. Oda ,
G. Hirt  and
G. MÜller
K. Kainosho
Affiliation:
Nikko Kyodo Co., Ltd, Electronic Materials and Components Laboratories 3–17–35, Niizo-Minami, Toda, Saitama, 335, Japan
O. Oda
Affiliation:
Nikko Kyodo Co., Ltd, Electronic Materials and Components Laboratories 3–17–35, Niizo-Minami, Toda, Saitama, 335, Japan
G. Hirt
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften 6 Martensstrale 7, 91058 Erlangen, Germany
G. MÜller
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften 6 Martensstrale 7, 91058 Erlangen, Germany
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Abstract

Recently, it was found that semi-insulating behavior of undoped InP can be realized by high pressure annealing of undoped high purity InP. In the present work, studies related with the achievement of the semi-insulating state are reviewed. Purification of raw materials, effect of native defects, effect of high pressure annealing, contamination of Fe are discussed. The semi-insulation mechanism is explained by the Shockley diagram. The semi-insulating state is supposed to be achieved by the annihilation of shallow donors (presumably phosphorus vacancies) and the compensation of the residual donors with a small amount of Fe deep acceptor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 101
Copyright
Copyright © Materials Research Society 1994

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