Hostname: page-component-7c8c6479df-ph5wq Total loading time: 0 Render date: 2024-03-19T11:48:48.481Z Has data issue: false hasContentIssue false

Semiconductor-metal Phase Transition in Doped Ion Beam Synthesized VO2 Nanoclusters

Published online by Cambridge University Press:  31 January 2011

Helmut Karl
Affiliation:
helmut.karl@physik.uni-augsburg.de, Universität Augsburg, Institut für Physik, Augsburg, Germany
J. Dreher
Affiliation:
J.Dreher@fakemail.com, Universität Augsburg, Institut für Physik, Augsburg, Germany
B. Stritzker
Affiliation:
B.Stritzker@fakemail.com, Universität Augsburg, Institut für Physik, Augsburg, Germany
Get access

Abstract

We have synthesized W and Mo doped VO2 nanoclusters embedded in 200 nm thick thermally grown SiO2 on 4-inch silicon wafers by sequential ion implantation of the elements V, W, Mo and O. The implantation energies have been chosen to locate the mean projected range in the centre of the SiO2 thin film. A post implantation rapid thermal annealing step in flowing Ar at 1000°C for 10 min leads to the growth of doped VO2 nanoclusters. The optical properties of the nanoclusters were analyzed by temperature dependent spectral ellipsometry in the spectral range of 320 to 1700 nm. It will be shown, that the semiconductor-metal phase transition hysteresis width starting at 50K in the undoped case can be systematically closed by increasing dopand concentration.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Morin, F. J. Phys. Rev. Lett. 3, 34 (1959).Google Scholar
2 Gupta, M. Freeman, A. J. Ellis, E. E. Phys. Rev. B 16, 3338 (1977).Google Scholar
3 Lopez, R. Boatner, L. A. Haynes, T. E. Appl. Phys. Lett. 85, 8, 14101412 (2004).Google Scholar
4 Chen, Changhong, Guo, Renfan Wang Lang Shang Chongfeng, Appl. Phys. Lett. 93, 171101 (2008).Google Scholar
5 Lopez, R. Boatner, L. A. Haynes, T. E. Apll. Phys. Lett. 79, 19, 31613163 (2001).Google Scholar
6 Lopez, R. Boatner, L. A. Haynes, T. E. Feldman, L. C. , Haglund, R. F. J. Appl. Phys., 92, 4031 (2002).Google Scholar
7 Donev, E. U. Lopez, R. Feldman, L. C. Haglund, R. F. Nano Letters 9, 702706 (2009).Google Scholar
8 Karl, H. Grosshans, I. Stritzker, B. Meas. Sci. & Technol. 216, 396401 (2004).Google Scholar
9 Karl, H. “Combinatorial Ion Beam Synthesis of II–VI Compound Semiconductor Nanoclusters”, Combinatorial and High-Throughput Discovery and Optimization of Catalysts and Materials, ed. by Potyrailo, R. and Maier, W. F. (CRC-Book, 2006).Google Scholar
10 Grosshans, I. Karl, H. Stritzker, B. Mat. Sci. and Eng. B-Solid State Mat. for Adv. Technol. 101, 1-3, 212251 (2003).Google Scholar