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Semiconductor Superlattices Studied by Grazing X-ray Scattering and Diffraction

  • Z. H. Ming (a1), Y. L. Soo (a1), S Huang (a1), Y. H. Kao (a1), K. Stair (a2), G. Devane (a2), C. Choifeng (a2), T. Chang (a3), L. P. Fu (a3), G. D. Gilliland (a3), J. Klem (a4) and M. Hafich (a4)...


Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.



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