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Semiconductor Superlattices Studied by Grazing X-ray Scattering and Diffraction

Published online by Cambridge University Press:  10 February 2011

Z. H. Ming ,
Y. L. Soo ,
S Huang ,
Y. H. Kao ,
K. Stair ,
G. Devane ,
C. Choifeng ,
T. Chang ,
L. P. Fu  and
G. D. Gilliland
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Z. H. Ming
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
Y. L. Soo
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
S Huang
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
Y. H. Kao
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, NY 14260
K. Stair
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
G. Devane
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
C. Choifeng
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
T. Chang
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
L. P. Fu
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
G. D. Gilliland
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
J. Klem
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185
M. Hafich
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185
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Extract

Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 325
Copyright
Copyright © Materials Research Society 1996

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References

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