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Semiconductor Superlattices: Order and Disorder

  • R. Hull (a1), J. E. Turner (a2), A. Fischer-Colbrie (a1), Alice E. Whitea (a3), K. T. Short (a3), S. J. Pearton (a3) and C. W. Tu (a3)...

Abstract

We review and discuss the main structural phenomena inherent in epitaxial multilayer semiconductor growth: lattice mismatch, misfit dislocation generation, two-dimensional vs. threedimensional growth, interface abruptness and planarity and the local atomic structure of semiconductor alloys. The prevalence of metastable structures, often a function of crystal growth temperature, is discussed. We also investigate the effect of Si ion implantation and subsequent rapid thermal annealing of AlGaAs/GaAs and InGaAs/GaAs multilayer structures, with reference to strain relaxation, layer planarity and enhanced Al, In and Si diffusion.

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Semiconductor Superlattices: Order and Disorder

  • R. Hull (a1), J. E. Turner (a2), A. Fischer-Colbrie (a1), Alice E. Whitea (a3), K. T. Short (a3), S. J. Pearton (a3) and C. W. Tu (a3)...

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