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Semiconductor Optoelectronic Device Fabrication Using Dry Etching

Published online by Cambridge University Press:  26 February 2011

Adam J. Carter ,
Ben Thomas ,
David V. Morgan  and
Jyoti K. Bhardwaj
Adam J. Carter
Affiliation:
School of Electrical, Elcctronic and Systems Engincering, University of Wales College of Cardiff, Po Box 904, Cardiff CFI 3YH, UK
Ben Thomas
Affiliation:
School of Electrical, Elcctronic and Systems Engincering, University of Wales College of Cardiff, Po Box 904, Cardiff CFI 3YH, UK
David V. Morgan
Affiliation:
School of Electrical, Elcctronic and Systems Engincering, University of Wales College of Cardiff, Po Box 904, Cardiff CFI 3YH, UK
Jyoti K. Bhardwaj
Affiliation:
Special Research Systems Ltd., Thornbury Laboratories, Littlcton-upon-Sevcrn, Bristol, BSl2 1NP, UK
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Abstract

Plasma etching of GaAs and InP using a CH4/H2 process gas and AlxGa1−xAs using a SiCl4 plasma are reported. Particular attention to etching characteristics as a function of gas and material composition, r.f. power, pressure and temperature are shown. Etching of GaAs and InP highlight two separate etching mechanisms. Surface roughness data at the etched surface is presented and Cl and CH4/H2 process chemistries are compared which shows the latter to yield significant improvements in etch surface characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 683
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Salzmann, J., Venkatessan, T., Marglit, S. and Yariv, A.. J. App. Phys 57(8) 2948–2950 (1985)CrossRefGoogle Scholar
[2] Coldren, L., Iga, K., Miller, B. and Rentschler, J.. App. Phys. Lett. 37(8), 681–3, (1980).Google Scholar
[3] Sonek, G., Jian-Zhong, L., Wolf, E. and Ballyntyne, J.. J. Lightwave Tech. LT–3(5), 1147–1150, (1985).Google Scholar
[4] Buchmann, P., Kaufman, H., Melchior, H. and Guekos, G.. Electron. Lett. 20 (7), 295–297, (1984).Google Scholar
[5] Niggebrugge, V., Albrecht, P., Doldissen, W., Nothing, H. and Schmidt, H. in Proc 4th Europ. Conf. Integrated Optic. EC10, 1987, 90–93, (Scottish Electron Tech Group, Glasgow 1987).Google Scholar
[6] Garrett, B. and Glew, R., Elect. Lett.23,9, 371–373, (1987)Google Scholar
] Cheung, R., Thorns, S., Beamont, S., Doughty, G., Law, V. and Wilkinson, C.. Elect. Lett. 23, 857–859, (1987)Google Scholar
] Niggebrugge, V., Klug, M. and Garus, G.. Proc. 12th Symp. on Gaas and Related Compounds, (Adam Hilger, Publishers, Bristol, 1986), 367–372 (1985).Google Scholar