Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T09:32:07.052Z Has data issue: false hasContentIssue false
  • English
  • Français

Sem-Ebic Characterization of Semiconducting and Semi-Insulating LEC-GaAs

Published online by Cambridge University Press:  25 February 2011

Yozo Tokumaru  and
Yasumasa Okada
Yozo Tokumaru
Affiliation:
Electrotechnical Laboratory, 1-1-4, Umezono, Sakura-mura, Ibaraki 305, Japan
Yasumasa Okada
Affiliation:
Electrotechnical Laboratory, 1-1-4, Umezono, Sakura-mura, Ibaraki 305, Japan
Get access

Abstract

We have applied the SEM-EBIC technique (electron-beam-induced current method using a scanning electron microscope) to the characterization of both semiconducting and semi-insulating liquid encapsulated Czocralski (LEC) grown GaAs and have found this technique to be effective for semiinsulating materials as well as semiconducting ones. In semiconducting Si-, In- and undoped LEC-GaAs, growth striations were observed under usual measurement conditions. In semi-insulating undoped LEC-GaAs, clear EBIC images of individual dislocations and cell structures of dislocations were obtained by applying a high reverse bias voltage of about 10∼100 V to the specimens. We have also investigated nearly dislocation-free semiinsulating In-doped LEC-GaAs and found inhomogeneities which are different from those observed in undoped specimens. The spatial resolution of this technique is estimated to be 2–3 μm, which agrees with the experimental result

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 165
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schick, J.D., Scanning Electron Microscopy/1981/I, SEM, Inc., AMF O'Hare, IL, p. 295.Google Scholar
2. Leamy, H.J., J. Appl. Phys. 53 R251 (1982).CrossRefGoogle Scholar
3. Tokumaru, Y. and Okada, Y., Jpn. J. Appl. Phys. 23 L64 (1984).CrossRefGoogle Scholar
4. Tokumaru, Y. and Okada, Y., Jpn. J. Appl. Phys. 24 L364 (1985).CrossRefGoogle Scholar
5. de Kock, A.J.R., Ferris, S.D., Kimerling, L.C. and Leamy, H.J., J. Appl. Phys. 48 301 (1977).CrossRefGoogle Scholar
6. Kimerling, L.C., Leamy, H.J., Benton, J.L., Ferris, S.D., Freeland, P.E. and Rubin, J.J., in Semiconductor Silicon 1977, edited by Huff, H.R. and Sirtl, E. (The Electrochemical Society, Inc., Princeton, N.J., 1977) p.468–480.Google Scholar
7. Bontink, W. and Amelinckx, S., Phil. Mag. 2 94 (1957).CrossRefGoogle Scholar
8. Dash, W.C., J. Appl. Phys. 31 2275 (1960).CrossRefGoogle Scholar
9. Kitano, T., Matsui, J. and Ishikawa, T., Jpn. J. Appl. Phys. 24 L948 (1985).CrossRefGoogle Scholar