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Self-Limited Photo-Assisted Synthesis of Silicon Nanocrystals

Published online by Cambridge University Press:  01 February 2011

C. Y. Chen ,
S. Kimura ,
S. Sen ,
S. Nozaki ,
H. Ono ,
K. Uchida  and
H. Morisaki
C. Y. Chen
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan The 21st Century COE Program: Coherent Optical Science, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
S. Kimura
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
S. Sen
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
S. Nozaki
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan The 21st Century COE Program: Coherent Optical Science, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
H. Ono
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan The 21st Century COE Program: Coherent Optical Science, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
K. Uchida
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
H. Morisaki
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Chofu-Shi, Tokyo 182–8585, Japan
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Abstract

Anomalous growth of silicon (Si) nanocrystals (NCs) was observed during Raman scattering measurements of nanosilica SiOx (x=0.9) powder with an average diameter of 40 nm. It was found that Si NCs were formed by exposure to the laser beam. This photo-assisted synthesis is similar to the thermal synthesis of Si NCs, which forms Si NCs by thermally decomposing SiOx into Si and SiO2. However, the photo-assisted synthesis is more effective in forming Si NCs than the thermal synthesis. Even one second after irradiation of the nanosilica SiOx powder with laser, Si NCs with an average size of 5 nm were formed. The Si NC size increases with increasing the laser power and exposure time. It is interesting to observe a self-limited size for higher laser power and prolonged exposure. The photo-assisted synthesis of Si NCs is proved to be a promising technique with a wide range of applications in nanotechnology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F10.21
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Iwayawa, T. S., Nakao, S., and Saith, K., Appl. Phys. Lett. 65, 1814 (1994).Google Scholar
2. Neshva, D., Ratis, C., Perakis, A., Bineva, I., Aneva, Z., Levi, Z., Alexandrova, S., and Hofmeister, H., J. Appl. Phys. 92, 4687 (2002).Google Scholar
3. Iacona, F., Franzo, G‥, and Spinella, C., J. Appl. Phys. 87, 1295 (2000)Google Scholar
4. Chen, Chang-Yong, Chen, Wei-De, Song, Shu-Fang, Xu, Zhen-Jia, J. Appl. Phys. 94, 5599 (2003).Google Scholar
5. Campbell, I. H. and Fauchet, P. M., Solid State Commun. 58, 739 (1986).Google Scholar
6. Garrido, B., Femandez, , Lopez, M., Garcia, C., Perez-Rodrigues, A., Morante, J.R., Bonafos, C., Carrada, M., and Claverie, A., J. Appl Phys 91, 798 (2002).Google Scholar
7. Sato, S., Nozaki, S., and Morisaki, H., J. Appl. Phys. 81, 1518 (1997).Google Scholar