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Self-catalyzed Tritium Incorporation in Amorphous and Crystalline

Published online by Cambridge University Press:  01 February 2011

Baojun Liu
Affiliation:
bal4@pitt.edu, University of Pittsburgh, Department of Electrical and Computer Engineering, Pittsburgh, Pennsylvania, United States
Nazir Kherani
Affiliation:
kherani@ecf.utoronto.ca, University of Toronto, Toronto, Canada
Kevin P Chen
Affiliation:
pec9@pitt.edu, University of Pittsburgh, Department of Electrical and Computer Engineering, Pittsburgh, Pennsylvania, United States
Tome Kosteski
Affiliation:
kostesk@ecf.utoronto.ca, UofT, Electrical & Computer Engineering, Toronto, Canada
Keith Leong
Affiliation:
leong@ecf.utoronto.ca, UofT, electrical & Computer Engineering, Toronto, Canada
Stefan Zuktynski
Affiliation:
stefan.zukotynski@utoronto.ca, University of Toronto, Toronto, Canada
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Abstract

Tritiated amorphous and crystalline silicon is prepared by exposing silicon samples to tritium gas (T2) at various pressures and temperatures. Total tritium content and tritium concentration depth profiles in the tritiated samples are obtained using thermal effusion and Secondary Ion Mass Spectroscopy (SIMS) measurements. The results indicate that tritium incorporation is a function of the material microstructure rather than the tritium exposure condition. The highest tritium concentration attained in the amorphous silicon is about 20 at.% on average with a penetration depth of about 50 nm. In contrast, the tritium occluded in the c-Si is about 4 at.% with a penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is higher than reported results from post-hydrogenation experiments. The beta irradiation appears to catalyze the tritiation process and enhance the tritium dissolution in silicon material.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Kosteski, T., et al., “Tritiated amorphous silicon betavoltaic devices,” IEE Proc.: Circuits Devices Syst., vol. 150, pp. 274281, Aug 2003.Google Scholar
2 Kherani, N. P., et al., “Tritiated Amorphous-Silicon for Micropower Applications,” Fusion Technology, vol. 28, pp. 16091614, Oct 1995.Google Scholar
3 Liu, B., et al., “Tritiation of amorphous and crystalline silicon using T2 gas,” Appl. Phys. Lett., vol. 89, p. 044104, Jul 24 2006.Google Scholar
4 Kherani, N.P., et al., “Hydrogen Effusion From Trititated Amorphous Silicon,” Journal of Applied Physics, 2008.Google Scholar
5 Kosteski, T., “Tritiated Amorphous Silicon Films and Devices,” Ph.D, Department of Electrical and Computer Engineering, University of Toronto, Toronto, 2001.Google Scholar
6 Khernai, N. P. and Shmayda, W. T., “Tritium-Materials Interacitons,” Nuclear Science and Technology, Safety in Tritium Handling Technology, Euro Course Series, pp. 85105, 1993.Google Scholar
7 Bower, K. E., et al., Polymer, Phosphors, and Voltaics for Radioisotope Microbatteries. Boca Raton, FL: CRC Press, 2002.Google Scholar
8 Liu, B., et al., “Power-scaling performance of a three-dimensional tritium betavoltaic diode,” Applied Physics Letters, vol. 95, p. 233112, 2009.Google Scholar
9 Dubeau, J., et al., “Radiation ionization energy in alpha-Si:H,” Physical Review B, vol. 53, pp. 1074010750, Apr 15 1996.Google Scholar
10 Yelon, A., et al., “Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model,” Journal of Non-Crystalline Solids, vol. 266, pp. 437443, May 2000.Google Scholar
11 Najar, S., et al., “Electronic Transport Analysis by Electron-Beam-Induced Current at Variable Energy of Thin-Film Amorphous-Semiconductors,” Journal of Applied Physics, vol. 69, pp. 39753985, Apr 1 1991.Google Scholar