Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-23T06:19:14.951Z Has data issue: false hasContentIssue false

Self-Assembled GdSi2 Nanostructures Grown on Si(001) Studied by TEM and STM

Published online by Cambridge University Press:  26 February 2011

Gangfeng Ye
Affiliation:
yegangfe@egr.msu.edu, Michigan State University, 2527 Engineering Building, Michigan State University, East Lansing, MI, 48824, United States
Martin A. Crimp
Affiliation:
Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824-1226USA
Jun Nogami
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, ON, Canada M5S 3E4
Get access

Abstract

Self-assembled gadolinium silicide (GdSi2) nanostructures grown on Si(001) were studied by transmission electron microscopy (TEM) and scanning tunneling microscopy (STM). Cross-sectional TEM and plan-view TEM moiré fringe pattern analyses show that the GdSi2 nanostructures can be divided into two classes: elongated nanowires with hexagonal crystal structure and rectangular islands with orthorhombic or tetragonal crystal structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Preinesberger, C., Vandre, S., Kalka, T., and Dahne-Prietsch, M., J. Phys. D 31, L43 (1998).Google Scholar
[2] Chen, Y., Ohlberg, D.A.A., Medeiros-Ribeiro, G., Chang, Y. A., and Williams, R. S., App. Phys. Lett. 76, 4004 (2000).Google Scholar
[3] Nogami, J., Liu, B. Z., Katkov, M. V., Ohbuchi, C., and Birge, N. O., Phys. Rev. B63, 233305 (2001).Google Scholar
[4] He, Z., Stevens, M., Smith, D. J., and Bennett, P. A., App. Phys. Lett. 83, 5292 (2003).Google Scholar
[5] Chen, J. C., Shen, G. H., and Chen, L. J., Appl. Surf. Sci. 142, 291 (1999).Google Scholar
[6] Chen, Y., Ohlberg, D. A. A., Medeiros-Ribeiro, G., Chang, Y. A., and Williams, R. S., Appl. Phys. A75, 353 (2002).Google Scholar
[7] Chen, Y., Ohlberg, D. A.A., and Williams, R. S., J. Appl. Phys. 91, 3213 (2002).Google Scholar
[8] Maex, K. and Rossum, M., Properties of Metal Silicides (INSPEC, 1995).Google Scholar
[9] Liu, B. and Nogami, J., J. Appl. Phys. 93, 593 (2003).Google Scholar
[10] Williams, D. B. and Carter, C. B., Transmission Electron Microscopy (Plenum, 1996).Google Scholar
[11] Liu, B.Z. and Nogami, J., Nanotechnology 14, 873 (2003).Google Scholar