Skip to main content Accessibility help
×
Home

Self Organized InAs Quantum Dots on Patterned GaAs Substrates

  • M. Schramboeck (a1), W. Schrenk (a1), A. M. Andrews (a1), T. Roch (a1), G. Fasching (a1), W. Brezna (a1), A. Lugstein (a1) and G. Strasser (a1)...

Abstract

We investigate the growth of InAs quantum dots on patterned GaAs substrates. The GaAs substrate has been structured using holographic lithography. Quantum dot formation along the patterns has been observed as well as an increase in homogeneity of the quantum dots. Furthermore, the use of ion beams focused to nanometer diameters for substrate patterning has been studied and showed promising results. For the investigation of vertically aligned InAs quantum dots, cross-sectional atomic force microscopy has been successfully employed.

Copyright

References

Hide All
1 Ohkouchi, S., Nakamura, Y., Nakamura, H., Asakawa, K., Physica E 21, 597600 (2004).
2 Kar, G. S., Kiravittaya, S., Stoffel, M., and Schmidt, O.G., PRL 93, 246103 (2004).
3 Zong, Z., and Bauer, G., Appl. Phys. Lett. 84, 1922 (2004).
4 Watanabe, S., El Pelucchi, Dwir, B., Mn Baier, H., Leifer, K., and Kapon, E., Appl. Phys. Lett. 84, 2907 (2004).
5 Heidemeyer, H., Denker, U., Müller, C., and Schmidt, O. G., PRL 91, 196103 (2003).
6 Fasching, G., Unterrainer, K., Brezna, W., Smoliner, J., and Strasser, G., Appl. Phys. Lett. 86, 063111 (2005).

Self Organized InAs Quantum Dots on Patterned GaAs Substrates

  • M. Schramboeck (a1), W. Schrenk (a1), A. M. Andrews (a1), T. Roch (a1), G. Fasching (a1), W. Brezna (a1), A. Lugstein (a1) and G. Strasser (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed