Article contents
Self Aligned Nitridation of TiSi2: A TiN/TiSi2Contact Structure
Published online by Cambridge University Press: 26 February 2011
Abstract
Titanium nitride is an ideal barrier to silicon migration into aluminium metallisations in MOS devices. Various means by which a TiN,TiSi2 contact structure can be achieved to give low resistivity interconnects and stable contacts are outlined. It is shown that TiN/ TiSi2 contact structures self aligned to contact holes cut down to the TiSi2 can be simply achieved. Results showing the stability of the nitride film against silicon diffusion are presented.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1985
References
- 3
- Cited by