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The Selectivity of Reactive Ion Etch of Ga0.5LIn0.49P/Gaas

Published online by Cambridge University Press:  25 February 2011

J.W. Wu ,
S.H. Chan ,
K.C. Lin ,
C.Y. Chang  and
E.Y. Chang
J.W. Wu
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
S.H. Chan
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
K.C. Lin
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
C.Y. Chang
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
E.Y. Chang
Affiliation:
Institute of Materials Science and Engineering, National Chiao Tung University, sinchu, Taiwan, ROC.
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Abstract

The Ga0.51In0.49p/GaAs system has better desired property (ΔEC >ΔEV) than the conventional AlGaAs/GaAs system for heterojunction bipolar transistor (HBT) application. However, in the fabrication of HBTs, a precise control of the etch of the epilayer is very important. In this study, CH4/H2 and BCl3/SF6 were used for the reactive ion etch of the Ga0.51In0.49P/GaAs. It is found that the etch rate of Ga0.51In0.49P could be higher than that of GaAs with CH4/H2 gas mixture under appropriate etching conditions. While in the case of BCl3/SF6, the etching rate of GaAs could be much higher than that of the Ga0.51In0.49P. By properly using CH4/H2 and BCl3/SF6, the fabrication of Ga0.51In0.49P-based device using reactive ion etch could be easily achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 755
Copyright
Copyright © Materials Research Society 1994

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References

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