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Selective Intermixing of Ion Irradiated Semiconductor Heterostructures

  • R. D. Goldberg (a1), I. V Mitchell (a1), P. G. Piva (a1), H. H. Tan (a2), C. Jagadish (a2), P. J. Poole (a3), G. C. Aers (a3), S. Charbonneau (a3), G. C. Weatherly (a4), M. B. Johnson (a2), M. Gal (a2), A. J. Springthorpe (a5), H. Chen (a6) and R. M. Feenstra (a7)...

Abstract

Significant progress has been realized in the use of quantum well intermixing (QWI) as a method for tailoring the bandgap energies of optoelectronic devices. Intermixing can be driven by an ion implantation process, an approach that appeals because of its simplicity, its planarity and its adaptability to selective area processing. Despite its success, the advantages of irradiation induced QWI need to be tested further and we report here current results of three research activities which address a) the existence or not of a simple scaling relationship which connects intermixing in a given QW structure for any ion species; b) reproducibility of intermixing in identical QW structures which have been obtained from different growth systems; and c) intermixing for above the well versus through the well implantation.

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