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Selective Growth of Heteroepitaxial GexSi1−x/Si Lateral Wells Using Pulsed Laser Induced Epitaxy

Published online by Cambridge University Press:  22 February 2011

Yih Chang ,
J. Kramer ,
S. Y. Chou ,
T. W. Sigmon  and
A. F. Marshall
Yih Chang
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
J. Kramer
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
S. Y. Chou
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
T. W. Sigmon
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
A. F. Marshall
Affiliation:
Center for Materials Research, Stanford University, Stanford, CA 94305
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Abstract

Patterned GexSi1−x/Si wells are fabricated for the first time by pulsed laser induced epitaxy technique, employing two different semiconductor processing steps to grow these structures selectively. Two different dimensions of Gt0.12 Si0.55 /Si wells are sucessfully formed, in which one is 3.5 μm wide and 1700Å deep while another is 6 μm wide and 1300Å deep. Transmission electron microscopy combined with energy-dispersive X-ray imaging reveals that the 2-D Ge redistribution profiles are well defined and no significant line or surface defects observed. The 2-D Ge well redistribution behavior, governed by heat and mass transport during laser processing, are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 619
Copyright
Copyright © Materials Research Society 1991

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References

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