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Selective Growth of Heteroepitaxial GexSi1−x/Si Lateral Wells Using Pulsed Laser Induced Epitaxy

  • Yih Chang (a1), J. Kramer (a1), S. Y. Chou (a2), T. W. Sigmon (a1) and A. F. Marshall (a3)...


Patterned GexSi1−x/Si wells are fabricated for the first time by pulsed laser induced epitaxy technique, employing two different semiconductor processing steps to grow these structures selectively. Two different dimensions of Gt0.12 Si0.55 /Si wells are sucessfully formed, in which one is 3.5 μm wide and 1700Å deep while another is 6 μm wide and 1300Å deep. Transmission electron microscopy combined with energy-dispersive X-ray imaging reveals that the 2-D Ge redistribution profiles are well defined and no significant line or surface defects observed. The 2-D Ge well redistribution behavior, governed by heat and mass transport during laser processing, are also discussed.



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[1] Tatsumi, T., Hirayama, H., and Aizaki, N., Appl. Phys. Lett., 52, 895 (1988).
[2] King, C. A., Ph.D. Theses, Stanford University, 1989.
[3] Hirayama, H., Hiroi, M., Koyama, K., and Tatsumi, T., Appl. Phys. Lett., 56, 2645 (1990).
[4] Abelson, J. R., Sigmon, T. W., Kim, K. B., and Weiner, K. H., Appl. Phys. Lett., 52, 230 (1988).
[5] Carey, P. G., Sigmon, T. W., Press, R. L., and Fahlen, T. S., IEEE Electron Device Lett., EDL-6, 291 (1985).
[6] Carey, P. G., Ph.D. Theses, Stanford University, 1988.


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