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Selective Growth of Heteroepitaxial GexSi1−x/Si Lateral Wells Using Pulsed Laser Induced Epitaxy

  • Yih Chang (a1), J. Kramer (a1), S. Y. Chou (a2), T. W. Sigmon (a1) and A. F. Marshall (a3)...

Abstract

Patterned GexSi1−x/Si wells are fabricated for the first time by pulsed laser induced epitaxy technique, employing two different semiconductor processing steps to grow these structures selectively. Two different dimensions of Gt0.12 Si0.55 /Si wells are sucessfully formed, in which one is 3.5 μm wide and 1700Å deep while another is 6 μm wide and 1300Å deep. Transmission electron microscopy combined with energy-dispersive X-ray imaging reveals that the 2-D Ge redistribution profiles are well defined and no significant line or surface defects observed. The 2-D Ge well redistribution behavior, governed by heat and mass transport during laser processing, are also discussed.

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