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Selective Growth of GaAs and A1xGa1−xas by Omvpe Using Tertiarybutylarsine

  • K. L. Tokuda (a1), D. W. Kisker (a1), M. Lamont-Schnoes (a2) and J. Lopata (a2)

Abstract

We have investigated the use of tertiarybutylarsine (TBAs) to selectively grow GaAs and AlxGa1−x As in trenches on partially-masked GaAs substrates. Both SiyNz and Si02 masks have been used, with geometries ranging from 4 - 160 μm. By varying temperature and pressure, we have optimized selectivity and minimized “ridge” growth near masked areas. The results show TBAs may be a suitable alternative to arsine for selective regrowth of these materials.

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[1] Azoulay, R., Bouadma, N., Bouley, J. C. and Dugrand, L., J. Cryst. Growth 55, 229 (1981).
[2] Iwasaki, T., Matsuo, N., Matsumoto, N. and Kashiwa, S., Jpn. J. Appl. Phys. 25 (1) L66 (1986).
[3] Ishi, M., Kamon, K., Shimazu, M., Mihara, M., Kumabe, H. and Isshiki, K., Elect. Lett. 23 (5) 179 (1987).
[4] Vodjdani, N., Erman, M. and Theeten, J. B., J. Cryst. Growth, 71, 141 (1985).
[5] Carlsson, J.-O., Critical Reviews in Solid State and Materials Sciences, 16 (3) 161 (1990).
[6] Kamon, K., Takagishi, S. and Mori, H., J. Cryst. Growth 73, 73 (1985).
[7] Shimoyama, K., Katoh, M., Noguchi, M., Inoue, Y., Gotoh, H., Suzuki, Y. and Satoh, T., J. Cryst. Growth 93, 803 (1988).
[8] Heinecke, H., Brauers, A., Grafahrend, F., Plass, C., Piitz, N., Werner, K., Weyers, M., Lüth, H. and Balk, P., J. Cryst. Growth, 77, 303 (1986).
[9] Ghosh, C. and Layman, R. L., Appl. Phys. Lett. 45 (11) 1229 (1984).
[10] Kamon, K., Takagishi, S. and Mori, H., Jpn. J. Appl. Phys. 25 (1) L10 (1986).
[11] Kamon, K., Shimazu, M., Kimura, K., Mihara, M. and Ishi, M., J. Cryst. Growth 77, 297 (1986).
[12] Takahashi, Y., Sakai, S. and Umeno, M., J. Cryst. Growth, 68, 206 (1984).
[13] Kuech, T. F., Tischler, M. A. and Potemski, R., Appl. Phys. Lett, 54 (10), 910(1989).
[14] Goorsky, M. S., Kuech, T. F. and Potemsky, R. in In-Situ Patterning: Selective Area Deposition and Etching, edited by Bernhardt, A. F., Black, J. G. and Rosenberg, R., (Mat. Res. Soc. Symp. Proc. 158, Pittsburgh, PA 1990) p. 351.
[15] Okamoto, K. and Yamaguchi, K., Appl. Phys. Lett., 48 (13) 849 (1986).
[16] Lum, R. M., Klingert, J. K., Ren, F. and Shah, N. M., Appl. Phys. Lett. 56 (4), 379 (1990).
[17] Miller, B. I., Young, M. G., Koren, U., Koch, T. L., Oron, M., Gnall, R. P., Hernandez-Gil, F., Zucker, J. E., Jones, K. E. and DeMiguel, J. L., Proceedings of the Second International Conference on Indium Phosphide and Related Compounds, Denver, CO, 1990.
[18] Haacke, G., Watkins, S. P., Burkhard, H., Calbick, C. J. and Quick, J. in (Mat. Res. Soc. Symp. Proc. 145, Pittsburgh, PA 1989) p. 217.
[19] Stringfellow, G. B., Organometallic Vapor-Phase Epitaxy, Theory and Practice, (Academic Press, Boston, 1989), p. 40.
[20] Smith, F. T. J. in Chemical Perspectives of Microelectronic Materials II, Paper E2.10, presented at the 1990 MRS Fall Meeting, Boston, MA, 1990, (to be published, Mat. Res. Soc. Symp. Proc. 204, Pittsburgh, PA 1990).
[21] Casey, H. C. Jr., and Panish, M. B., Heterostructure Lasers, Part A: Fundamental Principles, (Academic Press, New York, 1978) p. 193.
[22] Hornstra, J. and Bartels, W. J., J. Cryst. Growth 44, 513 (1978).

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Selective Growth of GaAs and A1xGa1−xas by Omvpe Using Tertiarybutylarsine

  • K. L. Tokuda (a1), D. W. Kisker (a1), M. Lamont-Schnoes (a2) and J. Lopata (a2)

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