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Selective Epitaxy of AlxGa1−x as and AlxGal−x as Based Structures

Published online by Cambridge University Press:  21 February 2011

M.S. Goorsky ,
T.F. Kuech  and
R. Potemski
M.S. Goorsky
Affiliation:
IBM T.J.Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598
T.F. Kuech
Affiliation:
IBM T.J.Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598
R. Potemski
Affiliation:
IBM T.J.Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598
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Abstract

Selective epitaxy of AlxGa1−x As by MOVPE was accomplished using diethyl gallium chloride and diethyl aluminum chloride as the metalorganic precursors. Selective epitaxy was achieved for Al containing compounds under certain growth conditions, but AlAs growth was not selective. Quantum wells were selectively grown on masked substrates and unpatterned GaAs wafers; QW luminescence was observed from all samples. Additionally, near gap luminescence was observed from AlxGa1−x, As heterostructures over the entire 550 °C - 850 °C growth temperature range. The ternary alloy composition was found to be a strong function of the gas phase composition and growth temperature. A simple thermodynamic model explained the dependence of growth rate and composition on these parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 351
Copyright
Copyright © Materials Research Society 1990

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References

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