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Selective Copper Cvd on Diamond Surfaces Using Self-Assembled Monolayers

  • Stephen J. Potochnik (a1) (a2), David S. Y. Hsu (a3), Jeffrey M. Calvert (a2) and Pehr E. Pehrsson (a1)

Abstract

Selective chemical vapor deposition (CVD) of conductive, adherent copper films was achieved on single-crystal and polycrystalline diamond substrates modified with a ligating aminosilane and a Pd-based catalyst. Only isolated copper particles deposited on hydrogenated or aminosilane-coated diamond substrates without Pd. The Pd catalyst enhanced selectivity by a factor of 103 to 104. Copper CVD was performed in a cold-walled chamber at 446-456 K and 8x10-3 Pa using hexafluoroacetylacetonate-Cu-trimethylvinylsilane in H2 (1:1). Surfaces were characterized with x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Patterned Cu features were formed by exposing the aminosilane films to patterned ultraviolet (193 nm) radiation prior to Pd-catalyst addition and Cu CVD.

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Selective Copper Cvd on Diamond Surfaces Using Self-Assembled Monolayers

  • Stephen J. Potochnik (a1) (a2), David S. Y. Hsu (a3), Jeffrey M. Calvert (a2) and Pehr E. Pehrsson (a1)

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