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Selective Chemical Vapour Deposition of Tungsten Using SiH4/WF6 Chemistry

  • C. A. van der Jeugd (a1), A. H. Verbruggen (a1), G. J. Leusink (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)...

Abstract

The effect of deposition temperature and SiH4/WF6 flow ratio on the resistivity and impurity content of SiH4/WF6 tungsten films has been investigated. It is found that low deposition temperatures and high SiH4/WF6 ratios result in films with a high resistivity up to 150 μΩcm, whereas films deposited at high temperatures have a resistivity of 9 μΩcm. From Electron Probe Micro Analysis and Auger Electron Spectroscopy we conclude that the resistivity increase is due to silicon which is incorporated in the tungsten film during deposition. This results in a resistivity increase of 20 to 40 μΩcm per at% Si.

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[1] Schmitz, J.E.J., Buiting, M.J. and Ellwanger, R.C. in “Tungsten and other Refractory Metals for VLSI Applications IV”, edited by Blewer, R.S. and McConica, C.M., (Mater. Res. Soc. Proc. Pittsburg, PA 1988), pp 2734.
[2] Joshi, R.V., Ahn, K.Y. and Fryer, P.M. in “Tungsten and other Refractory Metals for VLSI Applications IV”, edited by Blewer, R.S. and McConica, C.M., (Mater. Res. Soc. Proc. Pittsburg, PA 1988), pp 8592.
[3] Ohba, T., Suzuki, T. and Hara, T. in “Tungsten and other Refractory Metals for VLSI Applications IV”, edited by Blewer, R.S. and McConica, C.M., (Mater. Res. Soc. Proc. Pittsburg, PA 1988), pp 1726.
[4] van der Jeugd, C.A., Verbruggen, A.H., Leusink, G.J., Janssen, G.C.A.M. and Radelaar, S., Presented at the Workshop on “CVD Tungsten, Copper and other Advanced Metals for ULSI/VLSI Applications VI, San Mateo, CA, 1989
[5] Suzuki, M., Kobayashi, N. and Mukai, K., Presented at the Workshop on “CVD Tungsten, Copper and other Advanced Metals for ULSI/VLSI Applications VI, San Mateo, CA, 1989
[6] Rosler, R.S., Mendonca, J. and Rice, M.J. Jr., J. Vac. Sci. Technol. B 6(6), 1721, (1988)
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[8] Joshi, R.V., Smith, D.A., Basavaiah, S. and Lin, T., Thin Solid Films, 164 501, (1988)
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[10] Massalski, Thaddeus B., Binary alloy Phase Diagrams, (American Society for Metals, Ohio, 1986), p. 2063.

Selective Chemical Vapour Deposition of Tungsten Using SiH4/WF6 Chemistry

  • C. A. van der Jeugd (a1), A. H. Verbruggen (a1), G. J. Leusink (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)...

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