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Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

  • N.K Dhar (a1), P. Boyd (a1), M. Martinka (a1), J.D. Benson (a1), J.H. Dinan (a1) and A.A. Iliadis (a2)...

Abstract

A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed.

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Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

  • N.K Dhar (a1), P. Boyd (a1), M. Martinka (a1), J.D. Benson (a1), J.H. Dinan (a1) and A.A. Iliadis (a2)...

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