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Segregation of Si and Cu at AlSiCu / TiN Interfaces

Published online by Cambridge University Press:  15 February 2011

A. Kameyama ,
A. Yaoita ,
T. Kitano  and
S. Saito
A. Kameyama
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
A. Yaoita
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
T. Kitano
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
S. Saito
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

The behavior of Cu and Si in the Al-alloy / TiN interface has been demonstrated by techniques of SIMS, GDS, XRD and AES. Cu and Si were observed to segregate at the AlSiCu / TiN interfaces just after sputtered. This segregation occurred to form a layered structure, not an island one. As these materials at the interface remained to exist even after annealing, the distribution of Cu and Si after annealing would be governed by that just as sputtered. The segregation behavior of Cu in A1Cu / TiN structure was the same as that of AlSiCu / TiN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 407
Copyright
Copyright © Materials Research Society 1995

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References

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