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Segregation of Ag and Cu During Ion Beam and Thermally Induced Recrystallization of Amorphous Si

Published online by Cambridge University Press:  25 February 2011

J. S. Custer ,
Michael O. Thompson  and
J. M. Poatet
J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. M. Poatet
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The segregation of Ag and Cu impurities in amorphous Si during both thermal and ion beam induced epitaxial crystallization has been studied. During thermal regrowth at 550°C, both Ag and Cu are initially trapped at increasing concentration in the shrinking a-Si layer. At a critical concentration, though, regrowth becomes non-planar and the impurities are no longer entirely trapped in the a-Si. Above 0.08 at% and 0.15 at% respectively, the excess impurity is lost to the crystal region and diffuses rapidly away from the interface. Under low temperature (200 - 400°C) epitaxy induced by a 2.5 MeV Ar+ beam, segregation and trapping are initially observed. As regrowth proceeds, however, the segregation no longer follows the simple model

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 545
Copyright
Copyright © Materials Research Society 1989

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References

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