Skip to main content Accessibility help

Segregation and Interdiffusion of in Atoms in GaAs/InAs/GaAs Heterostructures

  • T. Kawai (a1), H. Yonezu (a1), Y. Ogasawara (a1), D. Saito (a1) and K. Pak (a1)...


The segregation and interdiffusion of In atoms in the GaAs/InAs/GaAs heterostructures were investigated by secondary ion mass spectroscopy. When the 1 ML thick InAs layer was grown in a layer-by-layer growth mode with no dislocations, the segregation of In atoms became marked with the increase of the growth temperature. However, the segregation was observed even at relatively low growth temperature of 400°C in molecular beam epitaxy. It was found that the segregation was markedly enhanced by dislocations near the heterointerface when the thick InAs layers were grown in a three-dimensional island growth mode. The interdiffusion of In atoms toward the growth direction occurred after thermal annealing, which could be assisted by vacancies propagating from the film surface into epilayer. It became apparent that the interdiffusion was effectively suppressed by a thin AlAs layer inserted in the GaAs cap layer.



Hide All
1. Moison, J. M., Guille, C., Houzay, F., Barthe, F., and Van Rompay, M., Phys. Rev. B, 40, 6149 (1989).
2. Moison, J. M., Houzay, F., Barthe, F., Gérard, J. M., Jusserand, B., Massies, J., and Turco-Sandroff, F. S., J. Cryst. Growth 111, 141 (1991).
3. Gerard, Jean-Michel and Marzin, Jean-Yves, Phys. Rev. B, 45, 6313 (1992).
4. Wang, S. M., Andersson, T. G., and Ekenstedt, M. J., Appl. Phys. Lett. 59, 2156 (1991).
5. Muraki, K., Fukatsu, S., Shiraki, Y., and Ito, R., Appl. Phys. Lett. 61, 557 (1992).
6. Roan, E. J. and Cheng, K. Y., Appl. Phys. Lett. 59, 2688 (1991).
7. Dutta, N. K., Chand, N., and Lopata, J., Appl. Phys. Lett. 61, 7 (1992).
8. Nakao, H. and Yao, T., Jpn. J. Appl. Phys. 28, L352 (1989).
9. Yamaguchi, H. and Horikoshi, Y., J. Appl. Phys. 68, 1610 (1990).
10. Kraut, Edgar A. andHarrison, Walter A., J. Vac. Sci. Technol. B, 2, 409 (1984).
11. López, M., Yamauchi, Y., Kawai, T., Takano, Y., Pak, K., and Yonezu, H., J. Vac. Sci. Technol. B, 10, 2157 (1992).
12. Van Vechten, J. A., J. Appl. Phys. 53, 7082 (1982).
13. Mark Greiner, E. and James Gibbons, F., Appl. Phys. Lett. 44, 750 (1984).
14. Lee, K. H., Stevenson, D. A., and Deal, M. D., J. Appl. Phys. 68, 4008 (1990).

Related content

Powered by UNSILO

Segregation and Interdiffusion of in Atoms in GaAs/InAs/GaAs Heterostructures

  • T. Kawai (a1), H. Yonezu (a1), Y. Ogasawara (a1), D. Saito (a1) and K. Pak (a1)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.