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Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices

Published online by Cambridge University Press:  31 January 2011

Francesca Iacopi ,
Rita Rooyackers ,
Roger Loo ,
Wendy Vanherle ,
Alexey Milenin ,
Kai Arstila ,
Anne Verhulst ,
Shotaro Takeuchi ,
Hugo Bender  and
Matty Caymax
...Show all authors
Francesca Iacopi
Affiliation:
iacopi@imec.be, IMEC, Leuven, Belgium
Rita Rooyackers
Affiliation:
rita.rooyackers@imec.be, IMEC, Leuven, Belgium
Roger Loo
Affiliation:
roger.loo@imec.be, IMEC, Leuven, Belgium
Wendy Vanherle
Affiliation:
wendy.vanherle@imec.be, IMEC, Leuven, Belgium
Alexey Milenin
Affiliation:
alexey.milenin@imec.be, IMEC, Leuven, Belgium
Kai Arstila
Affiliation:
kai.arstila@imec.be, IMEC, Leuven, Belgium
Anne Verhulst
Affiliation:
anne.verhulst@imec.be, IMEC, Leuven, Belgium
Shotaro Takeuchi
Affiliation:
shotaro.takeuchi@imec.be, IMEC, Leuven, Belgium
Hugo Bender
Affiliation:
Hugo.Bender@imec.be, IMEC, Leuven, Belgium
Matty Caymax
Affiliation:
Matty.Caymax@imec.be, IMEC, Leuven, Belgium
Thomas Hantschel
Affiliation:
thomas.hantschel@imec.be, IMEC, Leuven, Belgium
Anne Vandooren
Affiliation:
anne.vandooren@imec.be, IMEC, Leuven, Belgium
Philippe M Vereecken
Affiliation:
philippe.vereeken@imec.be, IMEC, Leuven, Belgium
Stefan De Gendt
Affiliation:
stefan.degendt@imec.be, IMEC, Leuven, Belgium
Marc Heyns
Affiliation:
Marc.Heyns@imec.be, IMEC, Leuven, Belgium
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Abstract

The feasibility of a templated seedless approach for growing segmented p-i-n nanowires –based diodes based on selective epitaxial growth is demonstrated. Such diodes are the basic structure for a TunnelFET device. This approach has the potential for being easily scalable at a full-wafer processing, and there is no theoretical limitation for control on nanowires growth and properties when scaling down their diameters, as opposed to an unconstrained vapor-liquid-solid growth. Moreover, Si/SixGe1-x hetero-structures are implemented, showing that this can improve the TFET ON current not only thanks to the lowered barrier for the band-to-band source-channel tunneling, but additionally thanks to its lower thermal budget for growth, allowing for better control of the abruptness of the doping profile at the source-channel tunneling interface.

Keywords

nanostructureelectronic materialcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA04-04
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Wagner, R. S. Ellis, W. C. Applied Physics Letters 4 (15), 89–90 Google Scholar
[2] Givargizov, E. I. Journal of Crystal Growth 31, 20–30 (1975).Google Scholar
[3] Bootsma, G. A. Gassen, H. J. J. Crystal Growth 10, 223–234 (1971).Google Scholar
[4] Sze, S.M. Physics of Semiconductor Devices, Wiley Interscience, New York, (1981).Google Scholar
[5] Demichel, O. Calvo, V. et al. , Nanoletters 9(7), 2575–2578, (2009).Google Scholar
[6] Guwanan, O. Guha, S. Solar Energy Materials & Solar Cells 93, 1388–1393, (2009).Google Scholar
[7] Iacopi, F. et al. , Nanotechnology 18(50), 505307, (2007).Google Scholar
[8] Eichhammer, Y. et al. , Archives of Metallurgy and Materials 53(4), 1133–1139, (2008).Google Scholar
[9] Iacopi, F. et al. , Electrochemical and Solid State Letter 11(9), K98–K100. (2008).Google Scholar
[10] Kim, B. S. et al. , Nanoletters 9(2), 864–869, (2009).Google Scholar
[11] Wu, Y. Cui, Y. et al. , Nanoletters 4(3), 433–436, (2004).Google Scholar
[12] Shimizu, T. et al. , Advanced Materials 19, 917–920, (2007).Google Scholar
[13] Moral Vico, J., Jansen, F., Maex, K. Groeseneken, G. Vereeeken, P.M. ECS Transcations 3(21) pp. 85–93. (2007).Google Scholar
[14] Verhulst, A. S. et al. , J.Appl.Phys. 104, 064514, (2008).Google Scholar
[15] Vandooren, A. et al. , 2009 Silicon Nanoelectronics Workshop, June 13-14, 2009.Google Scholar
[16] Sadjadi, R. Zhu, H. et al. , International Symposium on Semiconductor Manfacturing (ISSM), 15-17 Oct., Tokyo, JP, 2007.Google Scholar
[17] Loo, R. et al. , Journal of the Electrochemi Society 150 (10), pp.G638–G647, (2003).Google Scholar
[18] TSuprem4, Avant! Corporation, (2001).Google Scholar