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The Search for Interstitial Dislocation Loops Produced in Displacement Cascades at 20K in Copper

Published online by Cambridge University Press:  15 February 2011

M. A. Kirk
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
M. L. Jenkins
Affiliation:
Department of Materials, University of Oxford, Parks Rd., Oxford OX1 3PH, UK
H. Fukushima
Affiliation:
Faculty of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan
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Abstract

A low-temperature in situ ion-irradiation and annealing experiment has been performed by TEM in copper. Most defect clusters which persisted through an anneal to 120 K showed no size changes within the resolution (0.5 nm) of a new weak-beam sizing technique. Of 55 defects measured under a range of weakly diffracting conditions, 7 showed measurable size decreases while 3 showed size increases. We argue that these clusters are likely to be of vacancy and interstitial nature, respectively. Also on annealing to 120 K a fraction of about 25% of the clusters formed by irradiation with 600 kV Cu+ ions at 20 K disappeared, while a similar number of clusters appeared in different locations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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