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Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

  • Yiting Sun (a1) (a2), Elisabeth Levrau (a3), Michiel Blauw (a4), Johan Meersschaut (a1), Patrick Verdonck (a1), Herbert Struyf (a1), Christophe Detavernier (a3), Mikhail Baklanov (a1), Steven De Feyter (a2) and Silvia Armini (a1)...

Abstract

In this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

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Keywords

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

  • Yiting Sun (a1) (a2), Elisabeth Levrau (a3), Michiel Blauw (a4), Johan Meersschaut (a1), Patrick Verdonck (a1), Herbert Struyf (a1), Christophe Detavernier (a3), Mikhail Baklanov (a1), Steven De Feyter (a2) and Silvia Armini (a1)...

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