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Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching

  • Martine Claes (a1), Stefan De Gendt (a1), Thomas Witters (a1), Vidya Kaushik (a2), Jerry Chen (a2), Thierry Conard (a1), Annelies Delabie (a1), Sven Van Elshocht (a1) and Marc Heyns (a1)...

Abstract

A fast way to monitor the quality of high-k dielectric layers is wet etching, either monitored by Open Circuit Potential analysis or by Scanning Electron Microscopy. Defect densities in the order of 1.109 defects/cm2 are observed for as-deposited HfO2 layers. It is assumed that the mechanism for wet chemical defect observation is either due to crystallization and/or due to an oxygen deficient HfO2 layer resulting in Si/SiO up-diffusion upon thermal treatment. However, after appropriate post deposition annealing wet etch defect free layers can be prepared.

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Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching

  • Martine Claes (a1), Stefan De Gendt (a1), Thomas Witters (a1), Vidya Kaushik (a2), Jerry Chen (a2), Thierry Conard (a1), Annelies Delabie (a1), Sven Van Elshocht (a1) and Marc Heyns (a1)...

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