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Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).

Published online by Cambridge University Press:  28 February 2011

Yoshihisa Fujii ,
Atsuko Ogura ,
Katsuki Furukawa ,
Mitsuhiro Shigeta ,
Akira Suzuki  and
Shigeo Nakajima
Yoshihisa Fujii
Affiliation:
Central Research Laboratories, Engineering Center, Sharp Corporation, 2613—1 Ichinomoto, Tenri, Nara 632, Japan
Atsuko Ogura
Affiliation:
Central Research Laboratories, Engineering Center, Sharp Corporation, 2613—1 Ichinomoto, Tenri, Nara 632, Japan
Katsuki Furukawa
Affiliation:
Central Research Laboratories, Engineering Center, Sharp Corporation, 2613—1 Ichinomoto, Tenri, Nara 632, Japan
Mitsuhiro Shigeta
Affiliation:
Central Research Laboratories, Engineering Center, Sharp Corporation, 2613—1 Ichinomoto, Tenri, Nara 632, Japan
Akira Suzuki
Affiliation:
Central Research Laboratories, Engineering Center, Sharp Corporation, 2613—1 Ichinomoto, Tenri, Nara 632, Japan
Shigeo Nakajima
Affiliation:
Central Research Laboratories, Engineering Center, Sharp Corporation, 2613—1 Ichinomoto, Tenri, Nara 632, Japan
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Abstract

Schottky barrier contacts have been made on CVD—grown β - SiC on Si substrates, and their C—V and I—V characteristics are measured. Dependence of the Schottky characteristics on Si substrate orientation ((n11),(n=1,3,4,5,6), and (100)) is examined. The Schottky diodes of the β-SiC films on Si (611), Si(411), and Si (111) show excellent characteristics compared with the conventional Schottky diodes using Si(100) substrates. That is, reverse leakage currents are small, ideality factors are close to unity, and barrier heights are larger.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 351
Copyright
Copyright © Materials Research Society 1988

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