Skip to main content Accessibility help

Schottky Barriers on Magnetron Sputtered a-Si:H: Depletion width Effects on Photocarrier Collection vs Bandgap and Light Soaking

  • James R. Doyle (a1), N. Maley (a1) and John R. Abelson (a1)


We present a study of depletion width effects on the photocarrier collection efficiency in reactive magnetron sputtered a-Si:H films. Results are presented for as-deposited and light soaked 1.75 eV optical gap samples, and an as-deposited 1.60 eV gap film. The depletion width behavior with reverse bias is inferred from capacitance measurements. Comparison with photocurrent collection versus reverse bias voltage suggests that space charge effects can have an important role in the interpretation of collection efficiency on Schottky barriers.



Hide All
1. Chu, V., Conde, J.P., Shen, D.S., and Wagner, S., Appl. Phys. Lett. 55, 62 (1989).
2. Wronski, C.R., Smith, Z E., Aljishi, S., Chu, V., Shepard, K., Shen, D.S., Schwartz, R., Slobodin, D., and Wagner, S., in AIP Conference Proceedings No. 157. edited by Stafford, B. and Sabisky, E. (AIP, New York, 1987), p.70.
3. Doyle, J.R., Maley, N., and Abelson, J.R., presented at the International Meeting on the Stability of Amorphous Silicon 1991 (to be published as AIP Conference Proceedings).
4. Pinarbasi, M., Kushner, M.J., and Abelson, J.R., J. Appl. Phys. 68, 2255 (1990).
5. Crandall, R. S., J. Appl. Phys. 54, 7176 (1983).
6. Crandall, R.S., Williams, R., and Tompkins, B.E., J. Appl. Phys. 50, 5506 (1979).
7. David Cohen, J., in Semiconductors and Semimetals vol. 21C. edited by Pankove, J.I. (Academic Press, Orlando FL, 1984), p. 29.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed