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Schottky - Barrier Tunnelling Spectroscopy of Si:B Delta Layers

  • R. G. Biswas (a1), G. Braithwaite (a1), P. J. Phillips (a1), R. A. Kubiak (a1), E. H. C. Parker (a1), T. E. Whall (a1), A. Wood (a2) and A. O'Neill (a2)...

Extract

Delta doping in MBE has attracted considerable attention since its inception in 1980 [1], as a vehicle for studies of 2D phenomena and for its potential applications in, for example, FET devices [2] and I.R. detectors [3]. Boron delta doping in silicon is a recent development [4]. In previous papers we have reported on the growth, TEM, CV profiling, SIMS profiling and XRD characterisation of B delta layers [4,5,6]. It is of interest to know if the present growth method [4] produces a dopant sheet a monolayer wide or, in any event, what is the true width. Previous techniques [4,5,6] have yielded values between 0.4nm and 3nm for the width. Schottky barrier tunnelling spectroscopy provides further information on this question, but is also of interest for a study of the electronic structure of the delta layer. It has been used previously for a study of delta doping in III-V materials [7] and also for Sb delta doping in Si [8,9], but there have so far been no reports of its application to Si:B delta layers.

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1. Wood, C. F. C., Metze, G., Berry, J. and Eastman, L. F., J. App Phys 51, 383, (1983).
2. Nakagawa, K., Van Gorkum, A. A. and Shiraki, Y., App Phys Lett 54, 1869, (1989).
3. Tempel, G., Schwarz, N., Miller, F., Koch, F., Zeindl, H. P. and Eisele, I., Thin Solid Films 184, 171, (1990).
4. Mattey, N. L., Hopkinson, M., Houghton, R. F., Dowsett, M. G., McPhail, D. S., Whall, T. E., Parker, E. H. C., Booker, G. R. and Whitehurst, J., Thin Solid Films 184, 15, (1990).
5. Mattey, N. L., Dowsett, M. G., Parker, E. H. C., Whall, T. E., Taylor, S. & Zhang, J. F., App Phys Lett 57, 1698, (1990).
6. Powell, A. R., Mattey, N. L., Kubiak, R. A., Parker, E. H. C., Whall, T. E. and Bowen, D. K., Semi Sci Tech 6, 227, (1991).
7. Zachau, H., Koch, F., Ploog, K., Roentgen, P. and Beneking, H. Solid State Comm., 59, 591, (1986).
8. Zeindl, H. P., Wegehaupt, T., Eisele, I., Oppolzer, H., Reisinger, H., Temple, G. and Koch, F., App Phys Lett 50, 1164, (1987).
9. Li, H. M., Berggren, K. F., Ni, W. X., Sernelius, B. E., Willander, M. and Hansson, G. V., J. App Phys 67, 1962, (1990).

Schottky - Barrier Tunnelling Spectroscopy of Si:B Delta Layers

  • R. G. Biswas (a1), G. Braithwaite (a1), P. J. Phillips (a1), R. A. Kubiak (a1), E. H. C. Parker (a1), T. E. Whall (a1), A. Wood (a2) and A. O'Neill (a2)...

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