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Schottky Barrier Heights of Ni, Pt, Pd, and Au on n-type GaN

Published online by Cambridge University Press:  21 February 2011

A.C. Schmitz ,
A.T. Ping ,
M. Asif khan  and
I. Adesida
A.C. Schmitz
Affiliation:
Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Illinois 61801
A.T. Ping
Affiliation:
Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Illinois 61801
M. Asif khan
Affiliation:
APA Optics, Inc., Blaine, Minnesota 55449
I. Adesida
Affiliation:
Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Illinois 61801
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Abstract

Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN were measured using current-voltage and capacitance-voltage techniques. Measurements from the I-V technique yielded barrier heights of 0.95, 1.01, 0.94, and 0.87 eV for Ni, Pt, Pd, and Au, respectively. Barrier heights of 1.13,1.16, 1.07, and 0.98 eV, for Ni, Pt, Pd, and Au, respectively, were obtained using C-V measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 831
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Hacke, P., Detchprohm, T., Hiramatsu, K., and Sawaki, N., Appl. Phys. Lett. 63, pp. 2672–2678 (1993)Google Scholar
2 Binari, S.C., Dietrich, H.B., Kelner, G., Rowland, L.B., Doverspike, K., and Gaskill, D.K., Elect. Lett., 30, pp. 909–910 (1994)Google Scholar
3 Guo, J.D., Feng, M.S., Guo, R.J., Pan, F.M., and Chang, C.Y., Appl. Phys. Lett. 67, pp. 2657–2659 (1995)Google Scholar
4 Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B10, pp. 1237–1266 (1992)Google Scholar
5 Lide, D.R., CRC Handbook of Chemistry and Physics, CRC, Boca Raton, 1992, p. 12–108.Google Scholar