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Scanning Tunnelling Microscopy Study of the Growth Mechanism for Hydrogenated Amorphous Silicon Produced by Plasma Enhanced Chemical Vapour Deposition

Published online by Cambridge University Press:  10 February 2011

A.J. Flewitt ,
W.I. Milne ,
J. Robertson ,
A.W. Stephenson  and
M.E. Welland
A.J. Flewitt
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 IPZ, U.K.
W.I. Milne
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 IPZ, U.K.
J. Robertson
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 IPZ, U.K.
A.W. Stephenson
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 IPZ, U.K.
M.E. Welland
Affiliation:
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 IPZ, U.K.
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Abstract

Thin films of hydrogenated amorphous silicon (a-Si:H) have been deposited by plasma-enhanced chemical vapour deposition (PECVD), and the resulting topography measured in-situ on a nanometre scale using a scanning tunnelling microscope (STM). An island structure is observed on the surface of device quality a-Si:H, which can be quantitatively analysed using a one dimensional Fourier transform of the topography. Results suggest that deposition is limited by the creation of dangling bonds on the a-Si:H surface and not by the surface transport of SiH 3 radicals at the deposition temperature (598 K). Island nucleation takes place through the abstraction of hydrogen atoms from the a-Si:H surface by plasma etching and the subsequent attachment of an SiH 3 radicals to the available sites. A thermally activated hydrogen effusion process around the edge of each island, where the step edge causes a high local hydrogen concentration, then creates further dangling bonds which allow the islands to grow. A simulation has been constructed, which confirms this two stage mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 571
Copyright
Copyright © Materials Research Society 1998

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References

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