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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

  • Huajie Chen (a1), A. R. Smith (a1), R. M. Feenstra (a1), D. W. Greve (a2) and J. E. Northrup (a3)...

Abstract

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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[5] Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Ptak, A., Myers, T., Sarney, W., Salamanca-Riba, L., Shin, M., and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).
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[7] Smith, A.R., Feenstra, R.M., Greve, D.W., Neugebauer, J., and Northrup, J.E., Phys. Rev. Lett. 79, 3934 (1997).
[8] Northrup, J.E., Neugebauer, J., and Romano, L.T., submitted to Appl. Phys. Lett.
[9] Harrison, W.A., Electronic structure and the properties of solids (Freeman, San Francisco, 1980) p 176.
[10] Smith, A.R., Feenstra, R.M., Greve, D.W., Neugebauer, J., and Northrup, J.E., Appl. Phys. A 66, S947 (1998).
[11] Zywietz, T., Neugebauer, J., and Scheffler, M., Appl. Phys. Lett. 73, 487 (1998).
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[13] Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Shin, M.-S., Skowronski, M., Neugebauer, J., Northrup, J.E., J. Vac. Sci. Technol. A 16, 1641 (1998).
[14] Zywietz, T.K., Neugebauer, J., Scheffler, M., and Northrup, J.E. (unpublished).

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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

  • Huajie Chen (a1), A. R. Smith (a1), R. M. Feenstra (a1), D. W. Greve (a2) and J. E. Northrup (a3)...

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