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Scanning Tunneling Microscopy Studies of GaAs Heteroepitaxial Growth on Si

  • D. K. Biegelsen (a1), R. D. Bringans (a1), J. E. Northrup (a1) and L. E. Swartz (a1)

Abstract

We discuss the benefits and limitations of scanning tunneling microscopy (STM) for use in studies of the early stages of heteroepitaxy. We describe a system merging in vacuo an MBE, STM, XPS, LEED, etc. We present results for the initial stages of GaAs growth on vicinal Si(100), including As termination, Ga capping and subsequent 2D and 3D competition.

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Scanning Tunneling Microscopy Studies of GaAs Heteroepitaxial Growth on Si

  • D. K. Biegelsen (a1), R. D. Bringans (a1), J. E. Northrup (a1) and L. E. Swartz (a1)

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