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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light Emitting Diode

Published online by Cambridge University Press:  01 February 2011

Kristin L. Bunker ,
Roberto Garcia  and
Phillip E. Russell
Kristin L. Bunker
Affiliation:
Analytical Instrumentation Facility and Materials Science and Engineering Department, North Carolina State University, Box 7531, Raleigh, NC 27695, USA
Roberto Garcia
Affiliation:
Analytical Instrumentation Facility and Materials Science and Engineering Department, North Carolina State University, Box 7531, Raleigh, NC 27695, USA
Phillip E. Russell
Affiliation:
Analytical Instrumentation Facility and Materials Science and Engineering Department, North Carolina State University, Box 7531, Raleigh, NC 27695, USA
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Abstract

Scanning Electron Microscopy (SEM)-based Cathodoluminescence (CL) experiments were used to study the influence of piezoelectric fields on the optical and electrical properties of a commercial InGaN-based Multiple Quantum Well (MQW) Light Emitting Diode (LED). The existence and direction of a piezoelectric field in the InGaN-based LED was determined with voltage dependent SEM-CL experiments. The CL emission peak showed a blueshift followed by a redshift with increasing reverse bias due to the full compensation of the piezoelectric field. It was determined that the piezoelectric field points in the [000–1] direction and the magnitude was estimated to be approximately 1.0±0.2 MV/cm. SEM-CL carrier generation density variation and electroluminescence experiments were used to confirm the existence of a piezoelectric field in the InGaN-based MQW LED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.41
Copyright
Copyright © Materials Research Society 2005

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References

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