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Scanning E-Beam Annealing of Mos Devices

Published online by Cambridge University Press:  15 February 2011

J.D. Speight ,
A.E. Glaccum ,
D. Machin ,
R.A. Mcmahon  and
H. Ahmed
J.D. Speight
Affiliation:
British Telecommunications Research Laboratories, Martlesham Heath, Ipswich 1P5 7RE, ENGLAND
A.E. Glaccum
Affiliation:
British Telecommunications Research Laboratories, Martlesham Heath, Ipswich 1P5 7RE, ENGLAND
D. Machin
Affiliation:
British Telecommunications Research Laboratories, Martlesham Heath, Ipswich 1P5 7RE, ENGLAND
R.A. Mcmahon
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, ENGLAND
H. Ahmed
Affiliation:
Engineering Department, University of Cambridge, Cambridge CB2 1PZ, ENGLAND
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Abstract

Conditions for the scanning e-beam activation of P and As implanted source and drain junctions in production NMOS Si gate devices have been established. MOS devices with e-beam annealed, As-implanted, source and drain regions have been produced. The transistor parameters are found to be close to those of furnace annealed control devices, but e-beam annealed devices exbibit a smaller short-channel effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 383
Copyright
Copyright © Materials Research Society 1981

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References

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