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Scanning Cathodoluminescence Microscopy of Polycrystalline GaAs

  • Jack P. Salerno (a1), Ronald P. Gale (a1), John C. C. Fan (a1) and John Vaughan (a2)

Abstract

Scanning cathodoluminescence microscopy (SCM) has been used for nondestructive characterization of the optoelectronic properties of heavily Zn-doped, Bridgman-grown polycrystalline GaAs. Grain boundaries can either show no cathodoluminescence contrast, appear as dark lines, or appear slightly brighter than the surrounding matrix. Boundaries with similar surface morphologies can show different contrast. Spectral analysis data indicate that many of the observed features are due to local variations in impurity concentration.

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Scanning Cathodoluminescence Microscopy of Polycrystalline GaAs

  • Jack P. Salerno (a1), Ronald P. Gale (a1), John C. C. Fan (a1) and John Vaughan (a2)

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