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Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors

Published online by Cambridge University Press:  16 February 2011

C. Sudhama ,
J. C. Carrano ,
L. H. Parker ,
V. Chikarmane ,
J. C. Lee ,
A. F. Tasch ,
W. Miller ,
N. Abt  and
W. H. Shepherd
C. Sudhama
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
J. C. Carrano
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
L. H. Parker
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
V. Chikarmane
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
J. C. Lee
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
A. F. Tasch
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
W. Miller
Affiliation:
National Semiconductor, Santa Clara, CA
N. Abt
Affiliation:
National Semiconductor, Santa Clara, CA
W. H. Shepherd
Affiliation:
Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78712
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Abstract

This paper investigates the issues in the scaling of thin film PZT (Lead-Zirconate-Titanate) capacitors for DRAM (Dynamic Random Access Memories) applications. The test structures used were MIM (metal-insulator-metal) capacitors with platinum electrodes and PZT deposited using a sol-gel process. Charge storage density (Q'c), leakage current density (JL), unipolar switching time to 10% decay (ts), time dependent dielectric breakdown (TDDB) and electrical fatigue have been analyzed. Unipolar switching time has been modeled as an RC time constant, where C is electric-field dependent. Q'c at a given electric field appears to remain constant over the range of film thicknesses and electrode areas studied. Leakage current density and time-to-breakdown (tBD) for a given electric field degrade with decreasing film thickness. Unipolar stressing causes considerably less fatigue than bipolar stressing, and after 2 × 1011 cycles, a 400nm film still exhibits sufficient Q'c for DRAM operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 331
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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