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RuO2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials

Published online by Cambridge University Press:  15 February 2011

K. Yoshikawa ,
T. Kimura ,
H. Noshiro ,
S. Ohtani ,
M. Yamada  and
Y. Furumura
K. Yoshikawa
Affiliation:
Process Developmnt Div., Fujitsu Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
T. Kimura
Affiliation:
Process Developmnt Div., Fujitsu Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
H. Noshiro
Affiliation:
Process Developmnt Div., Fujitsu Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
S. Ohtani
Affiliation:
Process Developmnt Div., Fujitsu Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
M. Yamada
Affiliation:
Process Developmnt Div., Fujitsu Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
Y. Furumura
Affiliation:
Process Developmnt Div., Fujitsu Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
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Abstract

Ruthenium dioxide (RuO2) thin films are evaluated as bottom electrode for dielectric SrTiO3. It was found that a RuO2 (50nm) / Ru (20nm) barrier layer on a Si substrate is effective as an oxygen barrier layer and as a metal diffusion barrier layer for sputter deposited SrTiO3 films at substrate temperature of 450°C. To test suitability for high temperature processes, RuO2/Ru electrodes were annealed in air at 600°C. 100nm-thiick RuO2 was sufficient to prevent oxygen diffusion. After annealing in the same condition, the leakage current of sputter deposited SrTiO3 (150nm) on RuO2(50nm) / Ru(50nm) was 7.6 × 10 −9 (A/cm2) at 2V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 511
Copyright
Copyright © Materials Research Society 1994

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References

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