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RuO2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials

  • K. Yoshikawa (a1), T. Kimura (a1), H. Noshiro (a1), S. Ohtani (a1), M. Yamada (a1) and Y. Furumura (a1)...

Abstract

Ruthenium dioxide (RuO2) thin films are evaluated as bottom electrode for dielectric SrTiO3. It was found that a RuO2 (50nm) / Ru (20nm) barrier layer on a Si substrate is effective as an oxygen barrier layer and as a metal diffusion barrier layer for sputter deposited SrTiO3 films at substrate temperature of 450°C. To test suitability for high temperature processes, RuO2/Ru electrodes were annealed in air at 600°C. 100nm-thiick RuO2 was sufficient to prevent oxygen diffusion. After annealing in the same condition, the leakage current of sputter deposited SrTiO3 (150nm) on RuO2(50nm) / Ru(50nm) was 7.6 × 10 −9 (A/cm2) at 2V.

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RuO2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials

  • K. Yoshikawa (a1), T. Kimura (a1), H. Noshiro (a1), S. Ohtani (a1), M. Yamada (a1) and Y. Furumura (a1)...

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