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RTP Modeling for CVD and Thermal Oxidation

Published online by Cambridge University Press:  22 February 2011

F.Y. Sorrell ,
M.J. Fordham ,
Seungil Yu  and
A.J. Silva Neto
F.Y. Sorrell
Affiliation:
North Carolina State University, Dept. of Mechanical & Aerospace Engineering, Raleigh, NC 27695-7910
M.J. Fordham
Affiliation:
North Carolina State University, Dept. of Mechanical & Aerospace Engineering, Raleigh, NC 27695-7910
Seungil Yu
Affiliation:
North Carolina State University, Dept. of Mechanical & Aerospace Engineering, Raleigh, NC 27695-7910
A.J. Silva Neto
Affiliation:
North Carolina State University, Dept. of Mechanical & Aerospace Engineering, Raleigh, NC 27695-7910
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Abstract

A methodology for predicting the spatial and temporal distribution of film thickness is given for Chemical Vapor Deposition (CVD), and for thermal oxidation in Rapid Thermal Processor (RTP) systems, e.g. RTPCVD and RTO. The methodology is based on a wafer thermal model for the heat transfer to, from and within the wafer, a geometric ray trace algorithm to predict the radiant heat transfer from the lamps and reflectors to the wafer, a process model for the deposition or oxidation, and a gas flow model to predict the flow field in the RTP chamber. The CVD process is based on the Arrhenius deposition model, and thermal oxidation is based on a parallel diffusion model. The methodology has been validated by comparison of measured and predicted final film thickness from a cylindrical RTP system. The methodology is based on physical principles, with a minimum reliance on empirical relations and experimental data. As such it can be used for optimization of existing RTP designs and for the evaluation of proposed RTP configurations, such as new or novel lamp, reflector or chamber geometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 407
Copyright
Copyright © Materials Research Society 1994

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