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RTA-Preparation of β-FeSi2 Layers from MBE-Grown Fe-Si Films Deposited on Si and Relaxed SiGe (100) Substrates

  • M. LíBezný (a1), J. Poortmans (a1), J. Dekoster (a2), S. Degroote (a2), A. Vantomme (a2), B. G. M. De Lange (a3), G. Langouche (a2) and J. Nijs (a1)...

Abstract

Rapid thermal annealing (RTA) of Fe-Si layers co-deposited on n- and p- type Si (100) and Si-capped relaxed Si0.6Ge0.4 (100) substrates was studied. Relaxed (100) Si0.6Ge0.4 epitaxial layers represent a pseudo-matched substrate for the β-FeSi2 phase. Fe-Si layers with a 1:2 composition ratio were deposited at room temperature in an MBE system. Samples were then subjected to a rapid thermal annealing in a H2/N2-atmosphere in the temperature range between 500 and 800 °C. Conversion electron Mössbauer spectroscopy showed that the layers consist of the β-FeSi2 phase. Nomarski microscopy revealed crystal grains of the diameter from 5 to 10 μm. Cross-section transmission electron microscopy study found smooth surfaces and interfaces. No significant structural defects were found inside the grains. Differences between current-voltage characteristics of simple devices prepared on these layers agree with the trends expected from their band diagrams.

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