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Roughness Analysis of Si1-χGeχ Films

Published online by Cambridge University Press:  21 February 2011

R. M. Feenstra ,
M. A. Lutz  and
M. Copel
R. M. Feenstra
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
M. A. Lutz
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
M. Copel
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The morphology of Si1-χGeχ films is studied using atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Depending on growth temperature and Ge content, growth proceeds in either a layer-by-layer mode or by me growth of 3-dimensional coherent islands. In the former case strain relaxation occurs by formation and multiplication of misfit dislo-cations, leading to a cross-hatched surface morphology. In the latter case the rough morphology leads to a higher density of nucleation sites, and reduced glide efficiency, for the dislocations. A Fourier transform based method for analyzing the morphology is introduced, and is compared with other, existing roughness analysis methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 301
Copyright
Copyright © Materials Research Society 1995

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References

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