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Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition (Mocvd) of Optical Films

Published online by Cambridge University Press:  10 February 2011

John McAleese ,
L. Gary Provost ,
Gary S. Tompa ,
Andrei Colibaba-Evulet ,
Nick G. Gulmac  and
John J. Doyle
John McAleese
Affiliation:
Structured Materials Industries, 120 Centennial Avenue, Piscataway, NJ 08854-3908
L. Gary Provost
Affiliation:
Structured Materials Industries, 120 Centennial Avenue, Piscataway, NJ 08854-3908
Gary S. Tompa
Affiliation:
Structured Materials Industries, 120 Centennial Avenue, Piscataway, NJ 08854-3908
Andrei Colibaba-Evulet
Affiliation:
Rutgers University, Dept. of Mechanical and Aerospace Engineering, NJ 08854 -8065
Nick G. Gulmac
Affiliation:
Rutgers University, Dept. of Mechanical and Aerospace Engineering, NJ 08854 -8065
John J. Doyle
Affiliation:
Aerospace Display Systems, 2321 Topaz Drive, Hatfield, PA 19440
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Abstract

Over the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5° to 12° diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm × 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 171
Copyright
Copyright © Materials Research Society 2000

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