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Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate

  • X. M. Cheng (a1), Y. D. Zheng (a1), L. Zang (a1), X. B. Liu (a1), S. M. Zhu (a1), Z. Y. Lo (a1), P. Han (a1) and R.L. Jiang (a1)...


The thermally oxidized Si1−x−yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ∼370nm and ∼396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.



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