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Room Temperature Fabricated ZnO:Al with Elevated and Unique Light-Trapping Performance

  • E. V. Johnson (a1), C. Charpentier (a1) (a2), T. Emeraud (a3), J.F. Lerat (a3), C. Boniface (a4), K. Huet (a4), P. Prod’homme (a2) and P. Roca i Cabarrocas (a1)...

Abstract

We present a novel ZnO:Al fabrication process consisting of room-temperature vacuum sputtering followed by an excimer laser annealing (ELA). The ELA treatment improves the optical transmission of the films, and the film resistivities (<1 mΩ·cm) remain stable or improve with increasing laser fluence up to 0.6 J/cm2, as the carrier density increases but the carrier mobility is degraded. This process is followed by a standard dilute HCl chemical texturing step, and produces substrates with suitable texture, conductivity, and transparency properties for thinfilm photovoltaic applications. Substrates resulting from this process display elevated haze levels (80% at 600 nm and 50% at 800 nm) after the wet-chemical etching step. Such substrates have been used to make single junction hydrogenated nanocrystalline silicon solar cells, and an increase in the short-circuit current of up to 2.2 mA/cm2 is observed compared to a substrate deposited by a standard room-temperature sputtering + wet-etch process. This gain is primarily due to increased photo-response in the red due to improved light-scattering, as at wavelengths greater than 600 nm, a gain in photocurrent of up to 1.7 mA/cm2 is observed.

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Keywords

Room Temperature Fabricated ZnO:Al with Elevated and Unique Light-Trapping Performance

  • E. V. Johnson (a1), C. Charpentier (a1) (a2), T. Emeraud (a3), J.F. Lerat (a3), C. Boniface (a4), K. Huet (a4), P. Prod’homme (a2) and P. Roca i Cabarrocas (a1)...

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