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Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.

Published online by Cambridge University Press:  15 February 2011

André M. Rocher ,
André Oustry ,
Marie José David  and
Michel Caumont
André M. Rocher
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055, Toulouse cedex, France.
André Oustry
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 31062 Toulouse cedex, France.
Marie José David
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 31062 Toulouse cedex, France.
Michel Caumont
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 31062 Toulouse cedex, France.
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Abstract

CrSi2 layers grown by solid phase epitaxy on a nominal (111) Si surface exhibit in the same proportion two different orientation relationships, named A and B. When CrSi2 is deposited on a 8° vicinal (111) Si surface, B-type orientation is favoured with respect to the A type. This result can be explained by the fact that both the step width introduced by the miscut and the planar coincidence between {1100}Crsi2 and {111}Si are nearly equal to 23Å. Edge type misfit dislocations are observed at the interface with the same spacing. Their Burgers vector component along [111] is almost compensated by the atomic steps along the <110> directions. The role of the steps is discussed in term of elastic energy. Steps introduce misfit dislocations which make possible coherent growth of the B type orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 535
Copyright
Copyright © Materials Research Society 1996

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