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Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO3 Films on CeO2/YSZ/Si(001)

Published online by Cambridge University Press:  11 February 2011

Tomoaki Yamada
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Takanori Kiguchi
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, JAPAN
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Abstract

The role of the first atomic layers in epitaxial relationship and interface characteristics of SrTiO3 films on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates was investigated. Although SrTiO3 film deposited on CeO2/YSZ/Si directly was preferentially (110)-oriented, epitaxial SrTiO3(001) films could be grown on CeO2/YSZ/Si by controlling first atomic layer of the films. In the case of SrTiO3 film starting from TiO2 layer, the neither ion drift nor charge injection occurred in the SrTiO3/CeO2 interface. On the other hand, for the film starting from SrO layer, an injection-type hysteresis was observed. This is probably due to the electron traps in the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Moon, B. K. and Ishiwara, H., Jpn. J. Appl. Phys., 33 (1994) p.1472 Google Scholar
2. Yamada, T., Wakiya, N., Shinozaki, K. and Mizutani, N., IEEE International Symposium on Applications of Ferroelectrics 2002 (in press)Google Scholar
3. Migita, S. and Sakai, S., J. Appl. Phys., 89 (2001) p.5421 Google Scholar
4. Sánchez, F., Aguiar, R., Trtik, V., Guerrero, C., Ferrater, C. and Varela, M., J. Mater. Res., 13 (1998) p.1422 Google Scholar
5. Yamada, T., Wakiya, N., Shinozaki, K. and Mizutani, N., Key Engineering Materials, 228–229 (2002) p.137 Google Scholar
6. Yamada, T., Wakiya, N., Shinozaki, K. and Mizutani, N., Jpn. J. Appl. Phys., 40 (2001) p.281 Google Scholar
7. Kim, D.-W., Kim, D.-H., Kang, B.-S., Noh, T. W., Lee, D. R. and Lee, K.-B., Appl. Phys. Lett., 74 (1999) p.2176 Google Scholar