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The Role of Stress on the Shape of the Amorphous-Crystalline Interface and Mask-Edge Defect Formation in Ion-Implanted Silicon

Published online by Cambridge University Press:  17 March 2011

Carrie E. Ross  and
Kevin S. Jones
Carrie E. Ross
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32601, USA
Kevin S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32601, USA
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Abstract

Stress is known to affect the regrowth velocities during recrystallization of an amorphous layer. This study investigates how the stress from patterned structures alters regrowth and in turn affects defect formation. Prior to patterning, 80Å SiO2 and 1540Å of silicon nitride were deposited on a 200 mm [001] silicon wafer. A 40keV Si+ amorphizing implant at a dose of 1×1015 atoms/cm2 was then performed into the patterned wafer. The regrowth of the amorphous layer along the mask edge was studied by partially recrystallizing the layer for various times at 550°C both with the mask present and after etching off the oxide and nitride pads. A significant number of cross-sectional Transmission Electron Microscopy (TEM) samples were prepared and imaged. It was found that the stress from the patterned structures enhances the vertical and lateral regrowth velocities, as well as alters the shape of the amorphous-crystalline interface during regrowth. Previous studies have shown that uniaxial tensile stress increases the regrowth velocity. Simulations show that the region of interest in these samples is under tensile stresses, suggesting that this type of stress should accelerate the regrowth velocity. In addition dislocation half loops are observed to form along the mask edge for certain structures. The nucleation of these defects is suppressed by the presence of the film. The relationship between the stress from the patterned structures, the regrowth of the amorphous layer, and the formation of dislocation half-loops along the mask edge will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C10.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Guldi, R. L., J. Electrochem. Soc. 140, 3650 (1993).Google Scholar
2. Hsieh, Y. F. and Tsui, B. Y., Microelectron. Reliab. 38, 1871 (1998).Google Scholar
3. Küsters, K. H., Mühlhoff, H. M., and Cerva, H., Nucl. Inst. Meth. B 55, 9 (1991).Google Scholar
4. Onishi, Shigeo, Ayukawa, Akitsu, Tanaka, Kenichi, and Sakiyama, Keizo, J. Electrochem. Soc. 138, 1439 (1991).Google Scholar
5. Tamura, M. and Horiuchi, M., J. Cryst. Growth 99, 245 (1990).Google Scholar
6. Tamura, Masao and Horiuchi, Masatada, Jpn. J. Appl. Phys. 27, 2209 (1988).Google Scholar
7. Tamura, M., Horiuchi, M., and Kawamoto, Y., Nuc. Inst. Meth. Phys. Res. B 37/38, 329 (1989).Google Scholar
8. Horiuchi, M., Tamura, M., and Aoki, S., Nuc. Inst. Meth. Phys. Res. B 37/38, 285 (1989).Google Scholar
9. Horiuchi, M., Tamura, M., and Aoki, S., J. Appl. Phys 65 2238 (1989).Google Scholar
10. Cerva, H. and Bergholz, W., J. Electrochem. Soc. 140, 780 (1993).Google Scholar
11. Leroy, B. and Cain, O., Solid State Phenomena 35–36, 479 (1994).Google Scholar
12. Cerva, H. and Küsters, K. H., J. Appl. Phys 66, 4723 (1989).Google Scholar
13. Lietoila, A., Wakita, A., Sigmon, T.W., and Gibbons, J.F., J. Appl. Phys. 53, 4399 (1982).Google Scholar
14. Suni, I., Goltz, G.,.Grimaldi, G., and Nicolet, M-A., Appl. Phys. Lett. 40, 269 (1982).Google Scholar
15. Csepregi, L., Kennedy, E.F., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
16. Lu, Guo-Quan, Nygren, Eric, and Aziz, Michael J., J. Appl. Phys. 70, 5323 (1991).Google Scholar
17. Aziz, Michael J., Sabin, Paul C., and Lu, Guo-Quan, Phys. Rev. B 44, 9812 (1991).Google Scholar
18. Ross, C.E. and Jones, K.S. in Proceedings of the Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 429–432, April 2003.Google Scholar
19. FLOOPS Software, University of Florida, 2003.Google Scholar
20. Olson, G. L. and Roth, J. A., Mater. Sci. Rep. 3, 1 (1988).Google Scholar